Vertical Furnace

ZHF- 2008～6inch (Vertical furnace)

Size: 900 x 1900 x 3060mm

Widely used in silicon-based, compound semiconductors, filters, advanced packaging, power devices, Micro LEDs and other fields.

Technical parameters:

  1. Wafer size: 200mm. (or 150mm)
  2. Batch size: 150wafers/1tube
  3. Process pressure: atmospheric pressure/low pressure
  4. Power consumption: MAX 3Φ, 480VAC, 200A, 60Hz
  5. Cooling water：5kgf/cm2
  6. Exhaust system: 1500CFM
H2 Anneal Dry/Wet Oxidation Alloy
Forming GasAnneal Hi temp process (max 1300℃) LTO
TEOS Nitride Poly